A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-channel MOSFETs

4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by numerical simulation. To describe the observed electrical characteristics of the SiC MOSFETs, Near-Interface Traps (NIT) and mobility degradation models were included in the simulation. The main finding of the simulation is that two models for the NIT states in the upper part...

A New Method for Characterizing Very Low-Mass Companions with Low-Resolution Near-Infrared Spectroscopy

We present a new and computationally efficient method for characterizing very low-mass companions using low-resolution (R ∼ 30), near-infrared (Y JH) spectra from high-contrast imaging campaigns with integral field spectrograph (IFS) units. We conduct a detailed quantitative comparison of the efficacy of this method through tests on simulated data comparable in spectral coverage and resolution ...

Energy Position of the Active Near-Interface Traps in Metal–Oxide– Semiconductor Field-Effect Transistors on 4H–SiC

X-ray absorption near edge spectroscopy with a superconducting detector for nitrogen dopants in SiC

Fluorescence-yield X-ray absorption fine structure (FY-XAFS) is extensively used for investigating atomic-scale local structures around specific elements in functional materials. However, conventional FY-XAFS instruments frequently cannot cover trace light elements, for example dopants in wide gap semiconductors, because of insufficient energy resolution of semiconductor X-ray detectors. Here w...

Experimental Anechoic Chamber Measurements of a Target near an Interface

The backscattered field of an illuminated sphere with diameter ∅ = 30.5 cm above a perfect conducting plate is measured in an anechoic chamber at different heights for a varying incidence angle φ in the range 5◦ to 75◦. A high frequency field λ ∅ is transmitted, so that two significant transitions from lit to shadow regions are given over the entire incidence angle range for the considered ray ...